High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator
نویسندگان
چکیده
منابع مشابه
8.3 High-Performance Normally-off GaN MIS-HEMTs with Dual Gate Insulator employing PEALD SiNx Interfacial Layer and RF-sputtered HfO2
To fabricate high-performance GaN MIS-HEMTs, we have employed a novel SiNx/HfO2 dual gate insulator. A PEALD technique was used for very thin high quality SiNx (5 nm) as an interfacial layer, followed by RFsputtered HfO2 as a high-k dielectric for the second gate insulator structure. As a result, we have achieved excellent characteristics such as small subthreshold slope of 85 mV/dec, extremely...
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Article history: Received 27 May 2015 Accepted 9 June 2015 Available online xxxx
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Effects of process flows and device structures on the electrical properties of enhancement mode high electron mobility transistors (HEMTs) are investigated in this work. Except the demonstration of high threshold voltage (Vth) of 4.3V, the process window of the p-GaN residual thickness to ensure a steady operation current was estimated to be 10±5nm in our case. However, to achieve a high breakd...
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ژورنال
عنوان ژورنال: Energies
سال: 2020
ISSN: 1996-1073
DOI: 10.3390/en13102479